PDF | La solution solide Ga1-xInxAs ySb1-y a été cristallisée par la technique d’ épitaxie en phase liquide sur substrat GaSb orienté () et ()B dans la. Procédé d’épitaxie dans lequel le corps à partir duquel est formée la couche épitaxiale est amené à l’état liquide en contact avec le substrat à épitaxier. Resume: Un diagramme de phase precis dans la region riche en indium du systeme ternaire Ga-In-Sb a ete etabli. Les points du liquidus ont ete obtenus par .

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Diagramme de phases et croissance par epitaxie en phase liquide du gaxin1-xsb

En ajustant certains parametres thermodynamiques, l’accord obtenu avec les points experimentaux est excellent cote indium du diagramme liauide. The effect of adsorbed gas on the growth of gold films on mica at epitaxial temperatures is investigated by comparing the growths on air exposed and vacuum cleaved mica surfaces.

Nanoselective area growth of gan by metalorganic vapor phase epitaxy on 4h-sic using epitaxial graphene as a mask G. Epitaxial growth of gold phasr mica in an ultra-high vacuum. Homogeneity and other layer characteristics were examined. Some electrical measurements were reported.

A collection of writing tools that cover the many facets of English and French grammar, style and usage. Based on this splitting model, two innovative processes for fabrication of silicon films are proposed.


Two distinct epitaxid were evidenced, i.

Indium oxide thin films were grown by pulsed electron beam deposition method at C on c-cut sapphire and oriented LaAlO3 single crystal substrates in oxygen or argon gas. This constraint is a difficulty to circumvent as these faces are not present in the standard equilibrium morphology.

Toggle navigation Share your values. Relaxation times which are needed to reach steady-state conditions with respect to the concentration difference between the growing and solving interface in the case of a start or sudden stop of the heater motion can be obtained.

The language you choose must correspond to the language of the term you have entered. The GaN crystalline nanomesas have no threading dislocations, and do not show any V-pit. The kinetics is characterized by using a specially-dedicated furnace and by considering laser annealing. By fitting some thermodynamical parameters, good agreement with experimental points were obtained. Effects of substrate and ambient gas on epitaxial growth indium oxide thin films. The differences in film texture were correlated to the differences in growth conditions, while the differences in the film properties were correlated to the film oxygen composition.

Friday, January 26, – 6: Paris 9DOI: Un diagramme de phase precis dans la region riche en indium du systeme ternaire Ga-In-Sb a ete etabli. Oriented metallic nano-objects on crystalline surfaces by solution epitaxial growth.

Lasers and Masers Semiconductors Electronics.

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The process consists in first growing a graphene layers film on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Des couches de GaxIn1-xSb de 0 x 0,92 ont ete epitaxiees sur substrats d’InSb orientes dans la gamme de temperatures C. Liquidus isotherms and solidus lines were calculated using a regular solution model. In both cases, epitaxial In2O3 films having the bixbyite phase were grown with various orientation relationships, depending upon the substrate symmetry and gas ambient.


Domain matching epitaxy was used to describe the precise in-plane epitaxial film-substrate relationships. The successive stages of growth of the nucleated droplets liquidee a diffusion-driven free growth, an intermediate regime and a coarsening by reduction of interface. WO3 is sublimated at a relatively low temperature in air at atmospheric pressure.

Stoichiometric In2O3 films are formed in oxygen, while oxygen deficient In2O2. Services Articles pyase this article CrossRef We demonstrated this process with the ferroelectric crystal KTiOPO4 which is one of the most promising candidate materials for that purpose.

The differences in the two textures were correlated to the various atomic configurations in the and planes of the monoclinic -Ga2O3 phase. Have you forgotten your login? It opens attractive opportunities for the integration of nanocrystals in planar devices.