M25P16 DATASHEET PDF
M25PVMN6TP TR Micron Technology Inc. | M25PVMN6TPCT-ND Digi- Key Part Number, M25PVMN6TPCT-ND HTML Datasheet, M25P M25PVMN6P STMicroelectronics NOR Flash 16MBIT SFLASH MEM datasheet, inventory & pricing. Part, M25P Category. Description, 16 Mbit, Low Voltage, Serial Flash Memory With 50 MHZ Spi Bus Interface. Company, ST Microelectronics, Inc. Datasheet.
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Ordering datashwet scheme Example: The parameters in the DC and AC Characteristic tables that follow are derived from tests performed under the Measurement Conditions summarized in the relevant tables.
Logic diagram 6 Figure 2.
Micron Tech M25PVMW6TG – PDF Datasheet – FLASH In Stock |
Chip Select S must be driven High after the eighth bit of the data byte has been latched in. At Power-up, the device is in the following state: The old-style Electronic Signature is supported for reasons of backward compatibility, only, and should not be used for new designs.
When set to 1such a cycle is in progress, when reset to 0 no such cycle is in progress. Ordering information scheme 52 Table AC characteristics 25 MHz operation, Grade 3 added. AC measurement conditions 38 Table Before this can be applied, the bytes of memory need to have been erased to all 1s FFh.
D2 Max should not exceed D – K-2 x L. Chip Select S can be driven High at any time during data output. Each device in a system should have the V cc rail decoupled by a suitable capacitor close to the package pins. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied.
This is followed by the bit device identification, stored in the memory, being shifted out on Serial Data Output Qeach bit being shifted out during the falling edge of Serial Clock C. M52p16 modes supported 11 Figure 6. These parameters are characterized only. AC measurement conditions Symbol Parameter M25p1. Then the memory contents, at that address, is shifted out on Serial Data Output Qeach bit being shifted out, at a maximum frequency f cduring the falling edge of Serial Clock C.
Only one device is selected at a time, so only one device drives the Serial Data Output Q line at a time, the other devices are high impedance. Chip Select S must be driven High after the eighth bit of the last address byte has been latched in, otherwise the Sector Erase SE instruction is not executed. Normal precautions must be taken for supply rail decoupling, to stabilize the V cc supply. However, taking this signal Low does not terminate any Write Status Register, Program or Erase cycle that is m25l16 in progress.
After Power-up, a falling edge on Chip Select S is required prior to the start of any instruction. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. However, the correct operation of the device is not guaranteed if, by this time, V cc is still below V cc min. Values are latched on the rising edge of Serial Clock C.
Normally, the device is kept selected, with Chip Select S driven Low, for the whole duration of the Hold condition.
M25P16 Datasheet(PDF) – STMicroelectronics
Data retention and endurance 38 Table 1 2. Published internally, only Jun 0. The device consumption drops to I CC1. The value of the 8-bit Electronic Signature, for the M25P1 6, is 1 4h. That is, Chip Select S must driven High when the number of clock pulses after Chip Select S being driven Low is an exact multiple of All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues unaffected.
M25P16 SPI flash memory + LPC1769 – prototype work great, designed PCB not so good…
This can be achieved either a sector at a time, using the Sector Erase Datashewt instruction, or throughout the entire memory, using the Bulk Erase BE instruction. The device identification is assigned by the device manufacturer, and indicates the memory m52p16 in the first byte 20hand the memory capacity of the device in the second byte 15h. Grade 3 is available only in devices delivered in S08N packages. AC characteristics Grade 6 40 Table 1 6.
To spread this overhead, the Page Program PP instruction allows up to bytes to be programmed at a time changing bits from 1 to 0provided that they lie in consecutive addresses on the same page of memory. Absolute maximum ratings Symbol Parameter Min. For a list of available datashheet speed, package, etc. Instruction set 19 Table 5. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. Details of how to find the Technology Process in the marking are given in AN1see also Section Full text of ” Datasheet: The memory is organized as 32 sectors, each containing pages.
The designer needs to be aware that if a Power-down occurs while a Write, Program or Erase cycle is in progress, some data corruption can result. The memory can be programmed 1 to bytes at a time, using the Page Program instruction. This prevents the device from going back to the Hold condition.